Tanrikulu, Mahmud YusufRasouli, Hamid RezaGhaffari, MohammadTopalli, KaganOkyay, Ali Kemal2025-01-062025-01-0620160734-21011520-855910.1116/1.49471202-s2.0-84966711098https://doi.org/10.1116/1.4947120https://hdl.handle.net/20.500.14669/3220This paper demonstrates the possible usage of TiOx thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as -9%/K near room temperature is obtained. The noise properties of TiOx films are characterized. It is shown that TiOx films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications. (C) 2016 American Vacuum Society.eninfo:eu-repo/semantics/closedAccessAnataseOxıdeXpsArticle3Q234WOS:000379792200026Q2