Akyol, MustafaYu, GuoqiangWong, KinWang, Kang L.2025-01-062025-01-0620220003-69511077-311810.1063/5.01044272-s2.0-85138230389https://doi.org/10.1063/5.0104427https://hdl.handle.net/20.500.14669/3378The switching of perpendicularly magnetized ferromagnets via current-induced spin-orbit torques is of great interest because of its potential applications in memory and logic devices. However, the in-plane electric current itself is not enough to switch the magnetization. In addition to the electric current, an in-plane external magnetic field is required for magnetization switching. This limits the usage of such devices in spintronic applications. Here, we work on the current-driven perpendicular magnetization switching in the Pt/Ta(wedge)/CoFeB/MgO multilayer. The structural symmetry is broken in both z-axis and in-plane due to the wedge Ta layer, which results in a field-like spin-orbit torque. The beta( z )value extracted from the slope of the offset field vs current density increases with Ta layer thickness (< 1.0 nm) and then decreases up to z-axis asymmetries that enable the current-driven magnetization switching without the need for a magnetic field. We showed switching of the magnetization with a perpendicular magnetic anisotropy, switching in a wide range of Ta layer in Pt/Ta(wedge)/CoFeB/MgO multilayer. Published under an exclusive license by AIP Publishing.eninfo:eu-repo/semantics/closedAccessArticle11Q1121WOS:000874804000002Q2