Ozaslan, DoganGunes, MustafaGumus, Cebrail2025-01-062025-01-0620171300-70092147-588110.5505/pajes.2016.58672https://doi.org/10.5505/pajes.2016.58672https://hdl.handle.net/20.500.14669/3022Polycrystalline Cu2O thin films were obtained on glass substrates using by silar method at 70 degrees C. XRD analysis showed the films are a cubic structure and lattice parameters were calculated. The surface morphology of the films were imaged by FE-SEM (Field Emission Scanning Electron Microscope). In order to determine the optical properties of the Cu2O thin films UV/vis spectrophotometer was used. Optical transmittance (T%) values of the Cu2O films were determined in the wavelength range 300-1100 nm at room temperature. Semiconductor Cu20 of the thin films optical transmittance values were found to be 50-70% in the visible region. Energy band gap values (E-g) of the films were found to be 2.53-2.62 eV.trinfo:eu-repo/semantics/openAccessSilar methodThin filmCu2OPhysical propertiesArticle857785423WOS:000443172200007N/A